TTC5200(Q) Datasheet PDF - Toshiba

●The versatility of this NPN TTC5200(Q) GP BJT from Toshiba makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 150000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 230 V and a maximum emitter base voltage of 5 V.