●The UCC27517DBVT is a 1-channel High-speed Low-side Gate Driver that can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27517 can source and sink high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay, typically 13ns. The UCC27517 provides 4A source, 4A sink (symmetrical drive) peak-drive current capability at VDD =12V. Internal under-voltage lockout (UVLO) circuitry on the VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power semiconductor devices. It features a dual-input design which offers flexibility of implementing both inverting (IN- pin) and non-inverting (IN+ pin) configurations with the same device.
● 4A Peak source and 4A peak sink asymmetrical drive
● Fast propagation delays (13ns typical)
● Fast rise and fall times (9ns and 7ns typical)
● Outputs held low during VDD UVLO
● TTL and CMOS compatible input-logic threshold (independent of supply voltage)
● Hysteretic-logic thresholds for high noise immunity
● Dual-input design (choice of an inverting (IN- pin)/non-inverting (IN+ pin) driver configuration)
● Unused input pin can be used for enable or disable function
● Output held low when input pins are floating
● Input pin absolute maximum voltage levels not restricted by VDD pin bias supply voltage
● Green product and no Sb/Br
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
