●The UCC28063AD is a natural interleaving transition-mode Power Factor Correction (PFC) Controller with improved audible noise immunity. It is identical to UCC28063 with the exception that the TSET pin Open/Short Fault Detect and the CS pin Open Fault Detect features are removed. Removal of these Fault Detect features provides a higher degree of noise immunity to provide increased ride-through for applications where significant voltage noise could be coupled onto the TSET or CS pins during conditions of fast transient, surge or impulse noise on the AC Supply. By utilizing a natural interleaving technique, both channels operate as masters synchronized to the same frequency. This approach delivers inherently strong matching, faster responses and ensures that each channel operates in transition mode. Expanded system level protections feature input brownout and dropout recovery, output over-voltage, open-loop, overload, soft-start, phase-fail detection and thermal shutdown.
● Input filter and output capacitor ripple-current cancellation
● Reduced current ripple for higher system
● Reliability and smaller bulk capacitor
● Reduced EMI filter size
● Phase management capability
● Fail-safe OVP with dual paths prevents output overvoltage conditions by voltage-sensing failures
● Sensorless current-shaping simplifies board layout and improves efficiency
● Advanced audible noise performance
● Non-linear error-amplifier gain
● Soft recovery on overvoltage
● Integrated brownout and dropout handling
● Reduced bias currents
● Improved efficiency and design flexibility over traditional single-phase continuous conduction mode
● Inrush-safe current limiting
● Prevents MOSFET conduction during inrush
● Eliminates reverse recovery events in output rectifiers
● Enables use of low-cost diodes without extensive snubber circuitry
● Improved light-load efficiency
● Fast, smooth transient response
● Expanded system-level protections
●Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
Part 3D Model
