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Part Datasheet Search > MOSFETs > ROHM Semiconductor > US6M1TR Datasheet PDF
US6M1TR
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US6M1TR Datasheet PDF (8 Pages)
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US6M1TR Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Current Rating
1.40 A
Case/Package
SOT-363-6
Number of Channels
2 Channel
Number of Positions
6 Position
Drain to Source Resistance (on) (Rds)
170 mΩ
Polarity
N-Channel, Dual N-Channel
Power Dissipation
1 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
30V, 20V
Breakdown Voltage (Drain to Source)
30 V
Continuous Drain Current (Ids)
1.40 A, 1.00 A
Rise Time
6.00 ns
Input Capacitance (Ciss)
70pF @10V(Vds)
Input Power (Max)
1 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
1 W

US6M1TR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2 mm
Size-Width
1.7 mm
Size-Height
0.77 mm
Operating Temperature
150℃ (TJ)

US6M1TR Documents

ROHM Semiconductor
8 Pages / 0.09 MByte
ROHM Semiconductor
8 Pages / 0.09 MByte
ROHM Semiconductor
1 Pages / 0.14 MByte

US6M1 Documents

ROHM Semiconductor
TUMT6/SOT-363T N+P 30V 1.4A 0.27Ω
ROHM Semiconductor
TUMT N+P 30V/20V 1.4A/1A
ROHM Semiconductor
TUMT N+P 20V/12V 1.5A/1.3A
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