V10P10-M3/87A Datasheet PDF - Vishay Semiconductor

●High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

●Ultra Low VF = 0.453 V at IF = 5 A

●FEATURES

●• Very low profile - typical height of 1.1 mm

●• Ideal for automated placement

●• Trench MOS Schottky technology

●• Low forward volatge drop, low power losses

●• High efficiency operation

●• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

●• AEC-Q101 qualified

●• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

●•Halogen-free according to IEC 61249-2-21 definition

●TYPICAL APPLICATIONS

●For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection

●applications.