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VQ1001P Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

DIP-14

Description:

Trans MOSFET N-CH 30V 0.83A 14Pin SBCDIP

Pictures:

3D Model

Symbol

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Pinout

Product Pictures

Documentation:

VQ1001P Datasheet (5 Pages)

VQ1001P Datasheet PDF (5 Pages)

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VQ1001P Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

14 Pin

Case/Package

DIP-14

Drain to Source Resistance (on) (Rds)

1 Ω

Polarity

N-Channel

Power Dissipation

2 W

Threshold Voltage

1.5 V

Drain to Source Voltage (Vds)

30 V

Breakdown Voltage (Drain to Source)

30.0 V

Breakdown Voltage (Gate to Source)

±30.0 V

Continuous Drain Current (Ids)

3.00 A

Operating Temperature (Max)

150 ℃

View Datasheet >

VQ1001P Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tube

Size-Length

19.56 mm

Size-Width

7.87 mm

Size-Height

4.45 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

VQ1001P Environmental

VQ1001P Documents

VQ1001P Datasheet

Vishay Semiconductor

5 Pages / 0.04 MByte

VQ1001P Other Datasheet PDF

Vishay Semiconductor

4 Pages / 0.04 MByte

VQ1001P Notice File

Vishay Semiconductor

2 Pages / 0.04 MByte

VQ1001 Documents

VQ1001P Datasheet PDF

Vishay Semiconductor

Trans MOSFET N-CH 30V 0.83A 14Pin SBCDIP

VQ1001P Datasheet PDF

Vishay Siliconix

Trans MOSFET N-CH 30V 0.83A 14Pin SBCDIP

VQ1001P-2 Datasheet PDF

Vishay Siliconix

MOSFET 4N-CH 30V 0.83A 14DIP

VQ1001P-E3 Datasheet PDF

Vishay Siliconix

MOSFET 4N-CH 30V 0.83A 14DIP

VQ1001P Datasheet PDF

VISHAY

CDIP-14 4*N-CH 30V 830mA 1Ω

VQ1001P Datasheet PDF

Vishay Intertechnology

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

VQ1001P-E3 Datasheet PDF

VISHAY

CDIP-14 4*N-CH 30V 830mA 1Ω

VQ1001J Datasheet PDF

VISHAY

PDIP N-CH 30V 0.83A

VQ1001P-2 Datasheet PDF

VISHAY

PDIP-14 4*N-CH 30V 830mA 1Ω

VQ1001P-E3 Datasheet PDF

Vishay Intertechnology

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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