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Part Datasheet Search > Transistors > Vishay Siliconix > VQ1006P Datasheet PDF
VQ1006P
Part 3D Model
$ 78.44
VQ1006P Datasheet PDF (5 Pages)
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VQ1006P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
14 Pin
Case/Package
DIP-14
Drain to Source Resistance (on) (Rds)
4.00 Ω
Polarity
N-Channel
Power Dissipation
2.00 W
Drain to Source Voltage (Vds)
90 V
Breakdown Voltage (Drain to Source)
90.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
400 mA
Input Capacitance (Ciss)
60pF @25V(Vds)
Input Power (Max)
2 W

VQ1006P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

VQ1006P Documents

Vishay Siliconix
5 Pages / 0.05 MByte
Vishay Siliconix
4 Pages / 0.09 MByte

VQ1006 Documents

Vishay Semiconductor
Trans MOSFET N-CH 90V 0.4A 14Pin PDIP
Vishay Siliconix
Trans MOSFET N-CH 90V 0.4A 14Pin PDIP
VISHAY
PDIP-14 4*N-CH 90V 400mA 4Ω
Vishay Siliconix
MOSFET 4N-CH 90V 0.4A 14DIP
Vishay Siliconix
MOSFET 4N-CH 90V 0.4A 14DIP
VISHAY
PDIP-14 4*N-CH 90V 400mA
Vishay Semiconductor
Trans MOSFET N-CH 90V 0.4A 14Pin PDIP
VISHAY
PDIP-14 4*N-CH 90V 400mA 4.5Ω
Vishay Semiconductor
MOSFET 4N-CH 90V 0.4A 14DIP
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