ZTX649 Datasheet PDF - Diodes

●Do you require a transistor in your circuit operating in the high-voltage range? This NPN ZTX649 general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V.