ZTX851 Datasheet PDF - Diodes

●Compared to other transistors, the NPN ZTX851 general purpose bipolar junction transistor, developed by Diodes Zetex, can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.