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ZVP4105ASTOB
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ZVP4105ASTOB Datasheet PDF (1 Pages)
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ZVP4105ASTOB Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
-50.0 V
Current Rating
-175 mA
Case/Package
E-Line-3
Drain to Source Resistance (on) (Rds)
10.0 Ω
Polarity
P-Channel
Power Dissipation
625mW (Ta)
Input Capacitance
40.0 pF
Drain to Source Voltage (Vds)
50 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
175 mA
Rise Time
10.0 ns
Input Capacitance (Ciss)
40pF @25V(Vds)
Power Dissipation (Max)
625mW (Ta)

ZVP4105ASTOB Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape, Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

ZVP4105ASTOB Documents

Vishay Semiconductor
1 Pages / 0.04 MByte

ZVP4105 Documents

Zetex
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Vishay Semiconductor
MOSFET P-ch 50V 0.175A 10R 0.625W E-Line
Zetex
MOSFET P-CH 50V 175mA TO92-3
Diodes
MOSFET P-CH 50V 175mA TO92-3
Diodes
MOSFET P-CH 50V 0.175A TO92-3
Diodes Zetex
MOSFET P-CH 50V 175mA TO92-3
Zetex
MOSFET P-CH 50V 0.175A TO92-3
Vishay Semiconductor
MOSFET P-CH 50V 0.175A TO92-3
Vishay Semiconductor
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Diodes Zetex
MOSFET P-CHAN 50V TO92-3
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