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ZXM62P03E6TA
$ 0.165
ZXM62P03E6TA Datasheet PDF (7 Pages)
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ZXM62P03E6TA Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Voltage Rating (DC)
-30.0 V
Current Rating
-1.60 A
Case/Package
SOT-23-6
Drain to Source Resistance (on) (Rds)
230 mΩ
Polarity
P-Channel
Power Dissipation
0.806 W
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Gate to Source)
±12.0 V
Continuous Drain Current (Ids)
1.50 A
Rise Time
6.4 ns
Input Capacitance (Ciss)
330pF @25V(Vds)
Input Power (Max)
625 mW
Fall Time
10.3 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625mW (Ta)

ZXM62P03E6TA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.1 mm
Size-Width
1.8 mm
Size-Height
1.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

ZXM62P03E6TA Documents

Diodes
7 Pages / 0.28 MByte
Diodes
183 Pages / 0.63 MByte
Diodes
7 Pages / 0.54 MByte
Diodes
7 Pages / 0.28 MByte
Diodes
1 Pages / 0.14 MByte

ZXM62P03E6 Documents

Zetex
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Vishay Semiconductor
DIODES INC. ZXM62P03E6 MOSFET Transistor, P Channel, 2.6A, -30V, 110mohm, 10V, -1V
Diodes
MOSFET, P CH, 30V, -1.5A, SOT-23
Diodes
Trans MOSFET P-CH 20V 1.5A 6Pin SOT-23 T/R
Zetex
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Diodes
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Zetex
MOSFET P-CH 30V 2.6A SOT-23-6
Zetex
30V P-CHANNEL ENHANCEMENT MODE MOSFET
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