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FGA15N120 Datasheet PDF

Part Series:
FGA15N120 Series
Category:
-
Description:
Trans IGBT Chip N-CH 1200V 30A 186000mW 3Pin(3+Tab) TO-3P Tube
Updated Time: 2023/01/13 01:50:29 (UTC + 8)

FGA15N120 Datasheet PDF -

10 Pages
ON Semiconductor
Trans IGBT Chip N-CH 1200V 30A 186000mW 3Pin(3+Tab) TO-3P Rail
9 Pages
ON Semiconductor
Trans IGBT Chip N-CH 1200V 30A 186000mW 3Pin(3+Tab) TO-3P Tube
9 Pages
Fairchild
Trans IGBT Chip N-CH 1200V 24A 200000mW 3Pin(3+Tab) TO-3PN Rail
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Trans IGBT Chip N-CH 1.2kV 30A 3Pin(3+Tab) TO-3P Rail
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Trans IGBT Chip N-CH 1200V 30A 220000mW 3Pin(3+Tab) TO-3PN Rail

FGA15N120ANTDTU-F109 - ON Semiconductor Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Number of Positions
3 Position
Power Dissipation
186 W
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FGA15N120ANTDTU-F109 - ON Semiconductor Function Overview

Using Fairchild"s proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven
Features
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NPT Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 1.9V@ IC = 15A and TC = 25°C
Low switching loss: EOFF, typ = 0.6mJ@ IC = 15A and TC = 25°C
Extremely enhanced avalanche capability
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