H11G3 Datasheet PDF

●DESCRIPTION

●The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.

●FEATURES

●• High BVCEO

●   - Minimum 100 V for H11G1

●   - Minimum 80 V for H11G2

●   - Minimum 55 V for H11G3

●• High sensitivity to low input current

●  Minimum 500 percent CTR at IF = 1 mA

●• Low leakage current at elevated temperature (maximum 100 µA at 80°C)

●• Underwriters Laboratory (UL) recognized File# E90700

●APPLICATIONS

●• CMOS logic interface

●• Telephone ring detector

●• Low input TTL interface

●• Power supply isolation

●• Replace pulse transformer