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IRF1010 Datasheet PDF

Part Series:

IRF1010 Series

Category:

MOSFETs

Description:

TO-220AB N-CH 55V 85A

Document:

IRF1010EZSTRLP Datasheet PDF (15 Pages)

Updated Time: 2023/01/13 01:34:03 (UTC + 8)

IRF1010 MOSFETs Datasheet PDF

#1

IRF1010EZSTRLP

Datasheet PDF (15 Pages)

2.6

Infineon

#2

IRF1010EZPBF

Datasheet PDF (14 Pages)

3.5

Infineon

#3

IRF1010ZSTRLPBF

IRF1010ZSTRLPBF

Datasheet PDF (13 Pages)

2.5

Infineon

#4

IRF1010ZPBF

Datasheet PDF (13 Pages)

2.4

Infineon

IRF1010 Datasheet PDF MOSFETs

13 Pages

Infineon

D2PAK N-CH 55V 94A

13 Pages

International Rectifier

N-channel, MOSFET, Vdss = 60V, Rds = 12mΩ , Id = 84A 고속스위칭, TO-220타입

12 Pages

Infineon

TO-220AB N-CH 60V 84A

IRF1010ESTRLPBF

12 Pages

Infineon

D2PAK N-CH 60V 84A

IRF1010NSTRRPBF

12 Pages

Infineon

D2PAK N-CH 55V 85A

12 Pages

Infineon

D2PAK N-CH 55V 85A

12 Pages

Infineon

D2PAK N-CH 60V 84A

12 Pages

International Rectifier

MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 6.8Milliohms; ID 84A; TO-220AB; PD 140W; -55deg

12 Pages

International Rectifier

Trans MOSFET N-CH 60V 84A 3Pin(2+Tab) D2PAK Tube

IRF1010NSTRLPBF

11 Pages

Infineon

D2PAK N-CH 55V 85A

IRF1010NSTRLPBF

11 Pages

International Rectifier

Trans MOSFET N-CH 55V 85A 3Pin(2+Tab) D2PAK T/R

IRF1010ESTRLPBF

11 Pages

International Rectifier

MOSFET, 60V, 83A, 12MOHM, 86.6NC QG, D2-PAK

11 Pages

International Rectifier

Trans MOSFET N-CH 55V 85A 3Pin(2+Tab) D2PAK Tube

10 Pages

Infineon

TO-220AB N-CH 55V 85A

10 Pages

International Rectifier

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 11 Milliohms; ID 85A; TO-220AB; PD 180W; gFS 32S

9 Pages

International Rectifier

MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 84A; TO-220AB; PD 200W; gFS 69S

More IRF1010 Datasheet PDF >

IRF1010NPBF - Infineon Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Power Rating

130 W

Number of Channels

1 Channel

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IRF1010NPBF - Infineon Function Overview

●The IRF1010NPBF is a HEXFET® N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.

● Advanced process technology

● Dynamic dV/dt rating

● Fully avalanche rating

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