IRF720 Datasheet PDF

MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.07Ω; ID -4.6A; SO-8; PD 2.5W; VGS +/-20V

SOIC P-CH 30V 4.6A

SOIC P-CH 20V 5.3A

MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.06Ω; ID -5.3A; SO-8; PD 2.5W; VGS +/-12V

MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.06Ω; ID -5.3A; SO-8; PD 2.5W; VGS +/-12V

Trans MOSFET P-CH 30V 4.6A 8Pin SOIC Tube

MOSFET N-CH 400V 3.3A TO-220AB

MOSFET N-CH 400V 3.3A TO-220AB

MOSFET N-CH 400V 3.3A TO-220AB

3.3A, 400V, 1.8Ω, N-Channel Power MOSFET

Transistor Mos IRF720 SAMSUNG Ampere=3.3V=400 TO220

SOIC N-CH 30V 7.3A

Trans MOSFET N-CH 30V 7.3A 8Pin SOIC T/R

Transistor MOSFET N Channel 400V 3.3A 3Pin 3+ Tab TO-220 AB

Trans MOSFET N-CH 400V 3.3A 3Pin(3+Tab) TO-220AB

MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.03Ω; ID 7.3A; SO-8; PD 2.5W; VGS +/-20V; -55d