IRF7317 Datasheet PDF

●Description

●Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

●extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and

●ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

●l Generation V Technology

●l Ultra Low On-Resistance

●l Dual N and P Channel MOSFET

●l Surface Mount

●l Fully Avalanche Rated