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IRFBE30 Datasheet PDF

Part Series:

IRFBE30 Series

Category:

MOSFETs

Description:

MOSFET N-CH 800V 4.1A TO-220AB

Document:

IRFBE30SPBF Datasheet PDF (11 Pages)

Updated Time: 2023/01/13 01:49:02 (UTC + 8)

IRFBE30 MOSFETs Datasheet PDF

#1

IRFBE30SPBF

Datasheet PDF (11 Pages)

1.8

VISHAY

#2

IRFBE30LPBF

Datasheet PDF (11 Pages)

1.1

VISHAY

#3

IRFBE30STRLPBF

Datasheet PDF (11 Pages)

1.0

VISHAY

#4

IRFBE30

Datasheet PDF (10 Pages)

1.0

International Rectifier

IRFBE30 Datasheet PDF MOSFETs

10 Pages

VISHAY

TO-220AB N-CH 800V 4.1A

10 Pages

Vishay Siliconix

MOSFET N-CH 800V 4.1A TO-220AB

9 Pages

VISHAY

Trans MOSFET N-CH 800V 4.1A 3Pin(3+Tab) TO-220AB

9 Pages

Vishay Semiconductor

MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 3Ω; ID 4.1A; TO-220AB; PD 125W; VGS +/-20V

9 Pages

International Rectifier

Mosfet n-Ch 800V 4.1A To-220ab Mosfet n-Ch 800V 4.1A To-220ab Mosfet n-Ch 800V 4.1A To-220ab

9 Pages

Vishay Siliconix

Trans MOSFET N-CH 800V 4.1A 3Pin(3+Tab) TO-220AB

8 Pages

Vishay Semiconductor

VISHAY IRFBE30SPBF Power MOSFET, N Channel, 4.1A, 800V, 3Ω, 10V, 4V

8 Pages

Vishay Semiconductor

VISHAY IRFBE30LPBF Power MOSFET, N Channel, 4.1A, 800V, 3Ω, 10V, 4V

8 Pages

Vishay Semiconductor

Trans MOSFET N-CH 800V 4.1A 3Pin(2+Tab) D2PAK T/R

6 Pages

International Rectifier

800V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagel

More IRFBE30 Datasheet PDF >

IRFBE30 - International Rectifier Specifications

TYPE

DESCRIPTION

Voltage Rating (DC)

800 V

Current Rating

4.10 A

Drain to Source Resistance (on) (Rds)

3.00 Ω

Polarity

N-Channel

Power Dissipation

125 W

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IRFBE30 - International Rectifier Function Overview

●Description

●Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

●O Dynamic dv/dt Rating

●O Repetitive Avalanche Rated

●O Fast Switching

●O Ease of Paralleling

●O Simple Drive Requirements

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