IRGP4066 Datasheet PDF

●The IRGP4066D-EPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation. It is suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses.

● Low VCE (ON) Trench IGBT technology

● Low switching losses

● Square RBSOA

● 100% of Parts tested for ILM

● Positive VCE (ON) temperature coefficient

● Tight parameter distribution

● High efficiency in a wide range of applications

● 5µs Short-circuit SOA