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LM3S9B96 Datasheet PDF

Part Series:
LM3S9B96 Series
Category:
Microcontrollers
Description:
MCU 32Bit Stellaris ARM Cortex M3 RISC 256KB Flash 1.3V/3.3V 100Pin LQFP Tray
Updated Time: 2023/09/27 08:48:12 (UTC + 8)

LM3S9B96 Datasheet PDF Microcontrollers

1406 Pages
TI
MCU 32Bit ARM Cortex M3 RISC 256KB Flash 1.2V/3.3V 108Pin NFBGA
1406 Pages
TI
MCU 32Bit Stellaris ARM Cortex M3 RISC 256KB Flash 1.2V/3.3V 108Pin NF-BGA
1406 Pages
TI
IC MCU 32Bit 256KB FLASH 108BGA

LM3S9B96-IQC80-C5 - TI Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
100 Pin
Supply Voltage (DC)
3.00V (min)
Case/Package
LQFP-100
Number of Positions
100 Position
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LM3S9B96-IQC80-C5 - TI Function Overview

The LM3S9B96-IQC80-C5 is a 32-bit ARM® Cortex™ M3 Stellaris Microcontroller with system timer (SysTick), integrated nested vectored interrupt controller (NVIC), memory protection unit (MPU), System control block (SCB) and thumb-2 instruction set. Advanced serial integration features three UARTs with IrDA and ISO 7816 support (one UART with modem status and modem flow control), two Synchronous Serial Interface (SSI) modules, supporting operation for Freescale SPI, MICROWIRE or Texas Instruments synchronous serial interfaces, two Inter-Integrated Circuit (I²C) modules, providing Standard (100kbps) and Fast (400kbps) transmission and support for sending and receiving data as either a master or a slave. Advanced motion control features four PWM generator blocks, each with one 16-bit counter, two PWM comparators, a PWM signal generator, a dead-band generator and an interrupt/ADC-trigger selector, four PWM fault inputs to promote low-latency shutdown.
32-bit ARM® Cortex™-M3 80MHz processor
256KB of On-chip memory flash memory
SafeRTOS™ preemptive real-time kernel
Highly configurable
Advanced serial integration
Universal serial bus (USB) controller
ARM PrimeCell® 32-channel configurable µDMA controller
Multiple clock sources for microcontroller system clock
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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