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LM4861 Datasheet PDF

Part Series:
LM4861 Series
Category:
Audio Amplifiers
Description:
TEXAS INSTRUMENTS LM4861M Audio Power Amplifier, 1Channel, 0.5W(1/2W), 2V to 5.5V, SOIC, 8Pins
Updated Time: 2023/01/13 02:34:15 (UTC + 8)

LM4861 Datasheet PDF Audio Amplifiers

14 Pages
National Semiconductor
Audio Amp Speaker 1CH Mono 1.1W Class-AB 8Pin SOIC N T/R
14 Pages
National Semiconductor
Audio Amp Speaker 1CH Mono 1.1W Class-AB 8Pin SOIC N Rail
14 Pages
National Semiconductor
Audio Amp Speaker 1CH Mono 1.1W Class-AB 8Pin SOIC N Rail
14 Pages
National Semiconductor
Audio Amp Speaker 1CH Mono 1.1W Class-AB 8Pin SOIC N T/R

LM4861M - TI Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Supply Voltage (DC)
5.00 V
Case/Package
SOIC-8
Number of Circuits
1 Circuit
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LM4861M - TI Function Overview

The LM4861M is a 1.1W Audio Amplifier with shutdown mode. This Boomer series audio power amplifier capable of delivering 1.1W of continuous average power to an 8R load with 1% THD+N using a 5V power supply. Boomer audio power amplifier designed specifically to provide high quality output power with a minimal amount of external components using surface mount packaging. Since the LM4861 does not require output coupling capacitors, bootstrap capacitors or snubber networks, it is optimally suited for low-power portable systems. This amplifier features an externally controlled, low-power consumption shutdown mode, as well as an internal thermal shutdown protection mechanism. The unity-gain stable can be configured by external gain-setting resistors for differential gains of up to 10 without the use of external compensation components. Higher gains may be achieved with suitable compensation.
No output coupling capacitors, bootstrap capacitors or snubber circuits are necessary
Compatible with PC power supplies
Thermal shutdown protection circuitry
Unity-gain stable
External gain configuration capability
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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