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LM5069 Datasheet PDF

Part Series:
LM5069 Series
Category:
Hot Swap & Power Distribution
Description:
Hot Swap Controller 1CH 80V N-Channel Positive High Voltage 10Pin VSSOP T/R
Updated Time: 2023/01/13 01:36:58 (UTC + 8)

LM5069 Datasheet PDF Hot Swap & Power Distribution

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LM5069MM-2/NOPB - TI Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
10 Pin
Supply Voltage (DC)
9.00V (min)
Case/Package
MSOP-10
Number of Outputs
1 Output
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LM5069MM-2/NOPB - TI Function Overview

The LM5069MM-2/NOPB is a positive Hot Swap Controller provides intelligent control of the power supply connections during insertion and removal of circuit cards from a live system backplane or other hot power sources. The LM5069 provides in-rush current control to limit system voltage droop and transients. The current limit and power dissipation in the external series pass N-Channel MOSFET are programmable, ensuring operation within the safe operating area (SOA). The Power Good output indicates when the output voltage is within 1.25V of the input voltage. The input under-voltage and over-voltage lockout levels and hysteresis are programmable, as well as the initial insertion delay time and fault detection time. The LM5069-2 automatically restarts at a fixed duty cycle.
In-rush current limit for safe board insertion into live power sources
Programmable maximum power dissipation in the external pass device
Adjustable current limit
Circuit breaker function for severe over-current events
Internal high side charge pump and gate driver for external N-channel MOSFET
Adjustable under-voltage lockout (UVLO) and hysteresis
Adjustable over-voltage lockout (OVLO) and hysteresis
Initial insertion timer allows ringing and transients to subside after system connection
Programmable fault timer avoids nuisance trips
Active high open drain POWER GOOD output
Available in latched fault and automatic restart
Green product and no Sb/Br
Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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