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LM5113 Datasheet PDF

Part Series:
LM5113 Series
Category:
-
Description:
100V 1.2A / 5A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs
Updated Time: 2023/01/13 01:48:53 (UTC + 8)

LM5113 Datasheet PDF -

26 Pages
TI
Driver 5A 2Out Hi/Lo Side Half Brdg Non-Inv 12Pin DSBGA T/R
26 Pages
TI
Driver 5A 2Out Hi/Lo Side Half Brdg Non-Inv 12Pin DSBGA T/R
26 Pages
TI
5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40℃ to 125℃

LM5113 - TI Specifications

TYPE
DESCRIPTION
Rise Time
4 ns
Fall Time
4 ns
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LM5113 - TI Function Overview

The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently.
In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turn-on during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.
Independent High-Side and Low-Side
TTL Logic Inputs
1.2 A / 5 A Peak Source / Sink Current
High-Side Floating Bias Voltage Rail
Operates up to 100 VDC
Internal Bootstrap Supply Voltage Clamping
Split Outputs for Adjustable
Turn-on/Turn-off Strength
0.6 Ω / 2.1 Ω Pull-down/Pull-up Resistance
Fast Propagation Times (28 ns Typical)
Excellent Propagation Delay Matching
(1.5 ns Typical)
Supply Rail Under-Voltage Lockout
Low Power Consumption
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