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MJE200 Datasheet PDF

Part Series:
MJE200 Series
Category:
BJTs
Description:
TO-225-3 NPN 25V 5A
Updated Time: 2023/01/13 03:16:51 (UTC + 8)

MJE200 BJTs Datasheet PDF

MJE200 Datasheet PDF BJTs

4 Pages
Central Semiconductor
Trans GP BJT NPN 25V 5A 3Pin TO-126
4 Pages
Fairchild
Trans GP BJT NPN 25V 5A 3Pin(3+Tab) TO-126 Rail

MJE200 - ON Semiconductor Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
25.0 V
Current Rating
5.00 A
Case/Package
TO-225-3
Polarity
N-Channel
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MJE200 - ON Semiconductor Function Overview

Complementary Silicon Power Plastic Transistors
These devices are designed for low voltage, low-power, high-gain audio amplifier applications.
Features
• Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc
   = 45 (Min) @ IC = 2.0 Adc
   = 10 (Min) @ IC = 5.0 Adc
• Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc
• High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
• Pb-Free Packages are Available
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