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Part Datasheet Search > Semiconductors & Actives > PGA2311 Datasheet PDF
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PGA2311 Datasheet PDF

Part Series:
PGA2311 Series
Category:
Semiconductors & Actives
Description:
Audio Control, Volume, ± 4.75V to ± 5.25V, Serial, DIP, 16Pins, -40℃
Updated Time: 2023/01/13 01:37:43 (UTC + 8)

PGA2311 Datasheet PDF Semiconductors & Actives

26 Pages
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TEXAS INSTRUMENTS PGA2311UA. Audio Control, Volume, ± 4.75V to ± 5.25V, Serial, SPI, SOIC, 16Pins, -40℃
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TEXAS INSTRUMENTS PGA2311U/1K Audio Power Amplifier, 2Channel, ± 4.75V to ± 5.25V, SOIC, 16Pins
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Audio Amplifiers +/-5V St Aud Vol Control
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Audio Amplifiers 5V Stereo Audio Volume Control
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+/-5V Stereo Audio Volume Control 16-SOIC -40℃ to 85℃
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+/-5V Stereo Audio Volume Control 16-SOIC -40℃ to 85℃
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+/-5V Stereo Audio Volume Control 16-SOIC

PGA2311P - TI Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
16 Pin
Supply Voltage (DC)
-5.00 V
Case/Package
PDIP-16
Number of Channels
2 Channel
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PGA2311P - TI Function Overview

The PGA2311P is a high-performance Stereo Audio Volume Control designed for professional and high-end consumer audio systems. The PGA2311 uses an internal high-performance operational amplifier to yield low noise and distortion. The PGA2311 also provides the capability to drive 660R loads directly without buffering. The 3-wire serial control interface allows for connection to a wide variety of host controllers, in addition to support for daisy-chaining of multiple PGA2311 devices.
Digitally-controlled analog volume control - Serial control interface and zero crossing detection
Noise-free level transitions
Low interchannel crosstalk - 130dBFS
Power supplies - ±5V analog and +5V digital
Low noise and distortion - 120dB Dynamic range
+31.5 to -95.5dB with 0.5dB steps Wide gain and attenuation range
150°C Junction temperature
100pF Load capacitance stability
50mA Short-circuit current
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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