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SST39VF040 Datasheet PDF

Part Series:
SST39VF040 Series
Category:
Flash Memory
Description:
Flash Parallel 3.3V 4Mbit 512K x 8Bit 70ns 32Pin TSOP
Updated Time: 2023/01/13 02:48:51 (UTC + 8)

SST39VF040 Datasheet PDF Flash Memory

36 Pages
Microchip
NOR Flash Parallel 3.3V 4M-bit 512K x 8 70ns 32Pin PLCC T/R
36 Pages
Microchip
NOR Flash Parallel 3.3V 4Mbit 512K x 8Bit 70ns 32Pin TSOP T/R
36 Pages
Microchip
Flash Parallel 3.3V 4Mbit 512K x 8Bit 32Pin PLCC T/R
36 Pages
Microchip
NOR Flash Parallel 3.3V 4M-bit 512K x 8 70ns 32Pin TSOP
31 Pages
Microchip
Flash Parallel 3.3V 4Mbit 512K x 8Bit 70ns 48Pin TFBGA
31 Pages
Microchip
Flash Mem Parallel 3.3V 1Mbit 512K x 8Bit 70ns 32Pin TSOP T/R
31 Pages
Microchip
NOR Flash Parallel 3.3V 4M-bit 512K x 8 70ns 48Pin TFBGA T/R

SST39VF040-70-4I-WHE - Microchip Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
32 Pin
Supply Voltage (DC)
2.70V (min)
Operating Voltage
2.7V ~ 3.6V
Case/Package
TSOP-32
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SST39VF040-70-4I-WHE - Microchip Function Overview

The SST39VF040-70-4I-WHE is a 4MB CMOS multi-purpose Flash Memory manufactured with SSTs proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The devices conform to JEDEC standard pinouts for x8 memories. Featuring high performance byte-program, the device provides a maximum byte-program time of 20µsec. This device uses toggle bit or data# polling to indicate the completion of program operation. To protect against inadvertent write, it has on-chip hardware and software data protection schemes. Designed, manufactured and tested for a wide spectrum of applications, it is offered with a guaranteed typical endurance of 100000 cycles. Data retention is rated at greater than 100 years. The device is suited for applications that require convenient and economical updating of program, configuration or data memory.
Superior reliability
Low power consumption
Sector-erase capability - uniform 4 Kbyte sectors
Fast read access time - 70ns
Latched address and data
Fast erase and byte-program
Automatic write timing - internal VPP generation
End-of-write detection
CMOS I/O compatibility
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