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SST39VF1601 Datasheet PDF

Part Series:
SST39VF1601 Series
Category:
Flash Memory
Description:
1M X 16 FLASH 2.7V PROM, 70ns, PDSO48, 12 X 20MM, ROHS COMPLIANT, MO-142DD, TSOP1-48
Updated Time: 2023/01/13 03:32:49 (UTC + 8)

SST39VF1601 Datasheet PDF Flash Memory

39 Pages
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Flash Parallel 3.3V 16Mbit 1M x 16Bit 70ns 48Pin TFBGA T/R
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SST39VF1601 Series 16Mbit (1M x 16) 3V 70NS Multi Purpose Flash Plus WFBGA-48
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Flash Parallel 3.3V 16Mbit 1M x 16Bit 70ns 48Pin TSOP T/R
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Flash Parallel 3.3V 16Mbit 1M x 16Bit 70ns 48Pin WFBGA
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Flash Parallel 3.3V 16Mbit 1M x 16Bit 70ns 48Pin TFBGA T/R
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NOR Flash Parallel 3.3V 16Mbit 1M X 16Bit 70ns 48Pin TSOP T/R
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2.7V to 3.6V 16Mbit Multi-Purpose Flash48 TFBGA 6x8x1.2mm T/R
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1M X 16 FLASH 2.7V PROM, 70ns, PBGA48, 6 X 8MM, 0.8MM PITCH, ROHS COMPLIANT, MO-210AB-1, TFBGA-48
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NOR Flash Parallel 3.3V 16Mbit 1M x 16Bit 70ns 48Pin TSOP
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NOR Flash Parallel 3.3V 16Mbit 1M x 16Bit 70ns 48Pin TSOP T/R
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SST39VF1601-70-4C-EKE, Parallel Split Gate Flash Memory, 1M x 16Bit 16Mbit, 70ns, 2.7 3.6V, 48Pin, TSOP
36 Pages
Microchip
NOR Flash Parallel 3.3V 16M-bit 1M x 16 70ns 48Pin TFBGA T/R
36 Pages
Microchip
NOR Flash Parallel 3.3V 16Mbit 1M x 16Bit 70ns 48Pin TFBGA
36 Pages
Microchip
NOR Flash Parallel 3.3V 16Mbit 1M x 16Bit 70ns 48Pin TFBGA T/R
36 Pages
Microchip
NOR Flash Parallel 3.3V 16Mbit 1M x 16Bit 70ns 48Pin TSOP T/R
36 Pages
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NOR Flash Parallel 3.3V 16M-bit 1M x 16 70ns 48Pin TFBGA

SST39VF1601C-70-4I-EKE - Microchip Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
5 MHz
Number of Pins
48 Pin
Supply Voltage (DC)
2.70V (min)
Operating Voltage
2.7V ~ 3.6V
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SST39VF1601C-70-4I-EKE - Microchip Function Overview

The SST39VF1601C-70-4I-EKE is a 16MB CMOS multi-purpose Flash Memory manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The device writes with a 2.7 to 3.6V power supply. Featuring high performance word-program, the device provides a typical word-program time of 7µsec. This device uses toggle bit, data# polling or the RY/BY# pin to indicate the completion of program operation. To protect against inadvertent write, it has on-chip hardware and software data protection schemes. Designed, manufactured and tested for a wide spectrum of applications, this device is offered with a guaranteed typical endurance of 100000 cycles. Data retention is rated at greater than 100 years. It is suited for applications that require convenient and economical updating of program, configuration or data memory.
Superior reliability
Low power consumption
Hardware block-protection/WP# input pin
Sector-erase capability - uniform 2K word sectors
Block-erase capability
Chip-erase capability
Erase-suspend/erase-resume capabilities
Hardware reset pin
Latched address and data
Security ID
Fast read access time - 70ns
Fast erase and word-program
Automatic write timing - internal VPP generation
End-of-write detection
CMOS I/O compatibility
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