19N10 Datasheet PDF

●DESCRIPTION

●The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

●FEATURES

● RDS(ON)= 0.1Ω @VGS= 10 V

● Ultra low gate charge ( typical 19nC ) 

● Low reverse transfer Capacitance ( CRSS= typical 32pF )

● Fast switching capability

● Avalanche energy Specified

● Improved dv/dt capability, high ruggedness