AT28C010 Datasheet PDF

●The AT28C010E-12JU is a high-performance Electrically-Erasable and Programmable Read-Only Memory (EEPROM) with 1-Mbit of memory is organized as 131072 words by 8-bit. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 120ns with power dissipation of just 220mW. When the device is deselected, the CMOS standby current is less than 200µA. The AT28C010 is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writing of up to 128-byte simultaneously. During a write cycle, the address and 1 to 128-byte of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7.

● Automatic page write operation

● Internal control timer

● Fast write cycle times

● Page write cycle time - 10ms maximum

● Low power dissipation

● Hardware and software data protection

● Data polling for end of write detection

● High reliability CMOS technology

● Endurance - 10⁴ or 10⁵ cycles

● Data retention - 10 years

● CMOS and TTL Compatible inputs and outputs

● JEDEC Approved byte-wide pinout

● Industrial temperature ranges

● Green product and no Sb/Br