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IRF630 Datasheet PDF

Part Series:

IRF630 Series

Category:

MOSFETs

Description:

N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET

Document:

IRF630 Datasheet PDF (14 Pages)

Updated Time: 2023/01/13 01:21:24 (UTC + 8)

IRF630 MOSFETs Datasheet PDF

#1

IRF630

Datasheet PDF (14 Pages)

6.1

ST Microelectronics

#2

IRF630FP

Datasheet PDF (14 Pages)

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IRF630

Datasheet PDF (14 Pages)

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Fairchild

#4

IRF630

Datasheet PDF (14 Pages)

0.4

Intersil

IRF630 Datasheet PDF MOSFETs

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Harris

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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Vishay Siliconix

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

13 Pages

Infineon

TO-220AB N-CH 200V 9.3A

13 Pages

International Rectifier

MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.3Ω; ID 9.3A; TO-220AB; PD 82W; VGS +/-20V

12 Pages

Infineon

D2PAK N-CH 200V 9.3A

12 Pages

VISHAY

TO-220-3 N-CH 200V 9A 400mΩ

12 Pages

Infineon

D2PAK N-CH 200V 9.3A

12 Pages

International Rectifier

Trans MOSFET N-CH 200V 9.3A 3Pin(2+Tab) D2PAK Tube

12 Pages

International Rectifier

Trans MOSFET N-CH 200V 9.3A 3Pin(3+Tab) TO-220AB

12 Pages

VISHAY

TO-252-3 N-CH 200V 9A 400mΩ

11 Pages

VISHAY

TO-252-3 N-CH 200V 9A 400mΩ

10 Pages

Vishay Siliconix

MOSFET N-CH 200V 9A D2PAK

9 Pages

Vishay Semiconductor

Trans MOSFET N-CH 200V 9A 3Pin(3+Tab) TO-220AB

9 Pages

Vishay Siliconix

Trans MOSFET N-CH 200V 9A 3Pin(3+Tab) TO-220AB

9 Pages

Vishay Semiconductor

Trans MOSFET N-CH 200V 9A 3Pin(3+Tab) TO-220AB

8 Pages

VISHAY

Trans MOSFET N-CH 200V 9A 3Pin(3+Tab) TO-220AB

More IRF630 Datasheet PDF >

IRF630 - ST Microelectronics Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

200 V

Current Rating

9.00 A

Case/Package

TO-220-3

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IRF630 - ST Microelectronics Function Overview

●The IRF630 from STMicroelectronics is a through hole, 200V N channel mesh overlay II power MOSFET in TO-220 package. This power MOSFET is designed using the company"s consolidated strip layout based MESH OVERLAY process which matches and improves the performances. Features extremely high dv/dt capability, very low intrinsic capacitances and gate charge minimized.

● Drain to source voltage (Vds) is 200V

● Gate to source voltage of ±20V

● Continuous drain current (Id) is 9A

● Power dissipation (Pd) is 75W

● Operating junction temperature range from -65°C to 150°C

● Gate threshold voltage of 3V

● Low on state resistance of 350mohm at Vgs 10V

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