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BSH108 Datasheet PDF

Part Series:
BSH108 Series
Category:
-
Description:
TO-236AB N-CH 30V 1.9A
Updated Time: 2023/01/13 03:12:47 (UTC + 8)

BSH108 - NXP Specifications

TYPE
DESCRIPTION
Case/Package
SOT-23
Polarity
N-CH
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
1.9A
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BSH108 - NXP Function Overview

N-channel enhancement mode field-effect transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: FEATURES SYMBOL QUICK REFERENCE DATA • Very low threshold voltage VDS = 20 V • Fast switching • Logic level compatible ID = 1.05 A • Subminiature surface mount package
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