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Part Datasheet Search > Schottky Diodes > ON Semiconductor > 1N4454TR Datasheet PDF
1N4454TR
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1N4454TR Datasheet PDF (2 Pages)
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1N4454TR Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
2 Pin
Case/Package
DO-35
Number of Positions
2 Position
Forward Voltage
1V @10mA
Power Dissipation
500 mW
Thermal Resistance
300℃/W (RθJA)
Reverse recovery time
4 ns
Forward Current
200 mA
Max Forward Surge Current (Ifsm)
4 A
Maximum Forward Voltage (Max)
1 V
Forward Current (Max)
400 mA
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-65 ℃
Junction Temperature
175℃ (Max)
Power Dissipation (Max)
500 mW

1N4454TR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Height
4.56 mm
Operating Temperature
-65℃ ~ 175℃

1N4454TR Documents

ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
4 Pages / 0.13 MByte
ON Semiconductor
2 Pages / 0.02 MByte

1N4454 Documents

Fairchild
FAIRCHILD SEMICONDUCTOR 1N4454 Small Signal Diode, Single, 75V, 200mA, 1V, 4ns, 4A
ON Semiconductor
1N4454 Series 1A 50V 0.5W(1/2W) High Conductance Ultra Fast Diode - DO-35
Microsemi
DIODE GEN PURP 75V 200mA DO35
EIC
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM),
Gilbert
Rectifier Diode, 1 Element, 0.2A, 75V V(RRM), Silicon, DO-35
Microchip
Rectifier Diode Switching 75V 0.3A 4ns 2-Pin DO-35 Bag
TDK
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon
Sensitron Semiconductor
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS, MINIMELF-2
Surge Components
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35,
Diodes
SILICON SWITCHING DIODE
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