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Part Datasheet Search > BJTs > Microsemi > 2N2219AL Datasheet PDF
2N2219AL
$ 20.16
2N2219AL Datasheet PDF (4 Pages)
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2N2219AL Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-5-3
Power Dissipation
800 mW
Breakdown Voltage (Collector to Emitter)
50 V
hFE Min
100 @150mA, 10V
hFE Max
325
Input Power (Max)
800 mW
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
800 mW

2N2219AL Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tray
Material
Silicon
Operating Temperature
-55℃ ~ 200℃ (TJ)

2N2219AL Documents

Microsemi
4 Pages / 0.15 MByte

2N2219 Documents

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TI
Trans GP BJT NPN 30V 0.8A 3Pin TO-5
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HIGH-SPEED SWITCHESQ
Fairchild
NPN small signal general purpose amplifier & switch.
Continental Device
0.8W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 35 hFE.
ON Semiconductor
30V (2N2219) 50V (2N2219A, 2N2219AL), 800mA NPN Small Signal Transistor
Micro Commercial Components
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
Solid State Devices
Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
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