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2N2369A Datasheet PDF - Central Semiconductor

Manufacturer:

Central Semiconductor

Category:

BJTs

Case Package:

TO-18

Description:

2N Series 15V 200mA NPN Through Hole Silicon Transistor - TO-18

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Documentation:

2N2369A Datasheet (3 Pages)

Package Outline Dimension on2 Page 3 Page

2N2369A Datasheet PDF (3 Pages)

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2N2369A Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

500 MHz

Number of Pins

3 Pin

Case/Package

TO-18

Power Dissipation

360 mW

Breakdown Voltage (Collector to Emitter)

15 V

hFE Min

20 @100mA, 1V

hFE Max

120

Input Power (Max)

360 mW

Operating Temperature (Max)

200 ℃

Operating Temperature (Min)

-65 ℃

Junction Temperature

-65℃ ~ 200℃

Power Dissipation (Max)

360 mW

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2N2369A Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bulk

Material

Silicon

Size-Length

5.84 mm

Size-Width

5.84 mm

Size-Height

5.33 mm

Operating Temperature

-65℃ ~ 200℃ (TJ)

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2N2369A Environmental

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2N2369A Datasheet

Central Semiconductor

3 Pages / 0.6 MByte

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