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2N2222A
$ 0.378
2N2222A Datasheet PDF (5 Pages)
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2N2222A Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-18
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
1.2 W
Breakdown Voltage (Collector to Emitter)
40.0 V
DC Current Gain (hFE)
30
Operating Temperature (Max)
200 ℃

2N2222A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown

2N2222A Documents

Multicomp
5 Pages / 0.37 MByte
Multicomp
10 Pages / 0.36 MByte

2N2222 Documents

Multicomp
Bipolar (BJT) Single Transistor, NPN, 30V, 250MHz, 0.5W(1/2W), 800mA, 100 hFE
Central Semiconductor
Trans GP BJT NPN 30V 0.8A 3Pin TO-18 Box
ST Microelectronics
Bipolar (BJT) Single Transistor, NPN, 30V, 250MHz, 0.5W(1/2W), 800mA, 100 hFE
ON Semiconductor
Trans GP BJT NPN 30V 0.8A 3Pin TO-18
National Semiconductor
General Purpose Applications, 60V, 600mA, 330mW, B= 100~300, > 250MHz
Micro Commercial Components
TO-18 Metal Can TransistorsP
Fairchild
Transistor NPN 2N2222 TUNGSRAM miliampere=800V=30 TO18
Philips
NPN switching transistors
Continental Device
0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
Semicoa Semiconductor
Chip: geometry 0400; polarity NPN
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