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Part Datasheet Search > BJTs > Microsemi > 2N2369AUA Datasheet PDF
2N2369AUA
$ 68.339
2N2369AUA Datasheet PDF (2 Pages)
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2N2369AUA Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SMD-4
Polarity
NPN
Power Dissipation
0.36 W
Breakdown Voltage (Collector to Emitter)
15 V
hFE Min
20 @100mA, 1V
Input Power (Max)
360 mW
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
360 mW

2N2369AUA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Material
Silicon
Operating Temperature
-65℃ ~ 200℃ (TJ)

2N2369AUA Documents

Microsemi
2 Pages / 0.04 MByte
Microsemi
6 Pages / 0.09 MByte

2N2369 Documents

Multicomp
Bipolar (BJT) Single Transistor, Switching, NPN, 15V, 500MHz, 360mW, 200mA, 40 hFE
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Transistor: NPN; bipolar; 15V; 200mA; 0.36/1.2W; TO18
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Central Semiconductor
NPN METAL CAN - SATURATED SWITCH
Microsemi
Trans GP BJT NPN 15V 360mW 3Pin TO-18
Central Semiconductor
2N Series 15V 200mA NPN Through Hole Silicon Transistor - TO-18
Multicomp
MULTICOMP 2N2369A Bipolar (BJT) Single Transistor, NPN, 15V, 500MHz, 360mW, 200mA, 40
Semelab
Trans GP BJT NPN 15V 0.2A 3Pin CLLCC-1
ST Microelectronics
Trans GP BJT NPN 15V 0.2A 3Pin TO-18
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