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Part Datasheet Search > BJTs > Microsemi > 2N2905A Datasheet PDF
2N2905A
$ 9.698
2N2905A Datasheet PDF (7 Pages)
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2N2905A Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-205
Power Dissipation
0.6 W
Breakdown Voltage (Collector to Emitter)
60 V
hFE Min
100 @150mA, 10V
Input Power (Max)
800 mW
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
600 mW

2N2905A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bag
Material
Silicon
Operating Temperature
-65℃ ~ 200℃ (TJ)

2N2905A Documents

Microsemi
7 Pages / 0.63 MByte

2N2905 Documents

Motorola
Bipolar Transistors - BJT PNP Transistor
Microsemi
Trans GP BJT PNP 40V 0.6A 3Pin TO-39
Multicomp
MULTICOMP 2N2905 Bipolar (BJT) Single Transistor, High Speed Switching, PNP, 40V, 200MHz, 3W, 600mA, 100 hFE
ST Microelectronics
GENERAL PURPOSE AMPLIFIERS AND SWITCHESo
Central Semiconductor
Trans GP BJT PNP 40V 0.6A 3Pin TO-39 Box
CDIL
Transistor: PNP; bipolar; 60V; 600mA; 0.6/3W; TO39
ON Semiconductor
60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
Raytheon
GB PNP Medium Current General Purpose Amplifier and Switches
Solid State
Transistor; PNP; -60V; -600mA; TO-39
NXP
TRANSISTOR 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39, METAL PACKAGE-3, BIP General Purpose Small Signal
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