2N2905AL Datasheet PDF - Microsemi

●Jump-start your electronic circuit design with this versatile PNP 2N2905AL GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.