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2N3904BU
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2N3904BU Datasheet PDF (13 Pages)
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2N3904BU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
300 MHz
Number of Pins
3 Pin
Case/Package
TO-92-3
Number of Positions
3 Position
Power Dissipation
625 mW
Breakdown Voltage (Collector to Emitter)
40 V
hFE Min
100 @10mA, 1V
Input Power (Max)
625 mW
DC Current Gain (hFE)
100
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 mW

2N3904BU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bag
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N3904BU Documents

ON Semiconductor
13 Pages / 0.45 MByte
ON Semiconductor
13 Pages / 0.45 MByte
ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
27 Pages / 1 MByte
ON Semiconductor
1 Pages / 0.15 MByte

2N3904 Documents

ON Semiconductor
Trans GP BJT NPN 40V 0.2A 3Pin TO-92
Multicomp
MULTICOMP 2N3904 Bipolar (BJT) Single Transistor, NPN, 40V, 300MHz, 625mW, 200mA, 300 hFE
ST Microelectronics
TRANS NPN 40V 0.2A TO-92
CJ
TO-92 NPN 40V 200mA
NTE Electronics
Bipolar - RF Transistor, NPN, 40V, 300MHz, 625mW, 200mA, 300 hFE
Diotec Semiconductor
Transistor: NPN; bipolar; 40V; 200mA; 360mW; TO92
Central Semiconductor
Trans GP BJT NPN 40V 0.2A 3Pin TO-92 Box
先科ST
2N3904
Fairchild
The 2N3904 from Fairchild is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier.
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