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Part Datasheet Search > BJTs > ST Microelectronics > BD677A Datasheet PDF
BD677A
$ 0.413

BD677A Datasheet PDF - ST Microelectronics

Manufacturer:
ST Microelectronics
Category:
BJTs
Case Package:
TO-126-3
Description:
Trans Darlington NPN 60V 4A 40000mW 3Pin(3+Tab) SOT-32 Tube
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
BD677A Datasheet (12 Pages)
Package Outline Dimension on9 Page10 Page
BD677A Application Note (4 Pages)
BD677A Datasheet PDF (12 Pages)
View Datasheet
Click page to view the detail

BD677A Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
4.00 A
Case/Package
TO-126-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
40 W
Breakdown Voltage (Collector to Emitter)
60 V
hFE Min
750 @2A, 3V
Input Power (Max)
40 W
DC Current Gain (hFE)
750
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
40000 mW
View Datasheet >

BD677A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
7.8 mm
Size-Width
2.7 mm
Size-Height
10.8 mm
Operating Temperature
150℃ (TJ)
View Datasheet >

BD677A Documents

BD677A Datasheet
ST Microelectronics
12 Pages / 0.36 MByte
BD677A Application Note
ST Microelectronics
4 Pages / 0.07 MByte
BD677A Other References
ST Microelectronics
1 Pages / 0.16 MByte

BD677 Documents

BD677 Datasheet PDF
ST Microelectronics
Trans Darlington NPN 60V 4A 40000mW 3Pin(3+Tab) SOT-32 Tube
BD677 Datasheet PDF
ON Semiconductor
TO-225-3 NPN 60V 4A
BD677 Datasheet PDF
Multicomp
MULTICOMP BD677 Bipolar (BJT) Single Transistor, Darlington, NPN, 60V, 40W, 4A, 750
BD677 Datasheet PDF
Central Semiconductor
Trans Darlington NPN 60V 4A 40000mW 3Pin(3+Tab) TO-126 Box
BD677 Datasheet PDF
Continental Device
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
BD677 Datasheet PDF
TI
BD677
BD677 Datasheet PDF
National Semiconductor
TRANSISTOR,BJT,DARLINGTON,NPN,60V V(BR)CEO,4A I(C),TO-126
BD677 Datasheet PDF
Samsung
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
BD677 Datasheet PDF
Fairchild
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
BD677 Datasheet PDF
Motorola
Transistor NPN Darlington BD677 MOTOROLA Ampere=4 TO126
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