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Part Datasheet Search > BJTs > Central Semiconductor > 2N5210 Datasheet PDF
2N5210
$ 0.111
2N5210 Datasheet PDF (9 Pages)
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2N5210 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-226-3
Power Dissipation
350 mW
Breakdown Voltage (Collector to Emitter)
50 V
hFE Min
200 @100µA, 5V
Input Power (Max)
350 mW
Operating Temperature (Max)
150 ℃

2N5210 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Size-Length
5.21 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

2N5210 Documents

Central Semiconductor
9 Pages / 0.18 MByte
Central Semiconductor
9 Pages / 0.2 MByte
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