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2N5210BU
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2N5210BU Datasheet PDF (7 Pages)
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2N5210BU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
30 MHz
Number of Pins
3 Pin
Case/Package
TO-92-3
Number of Positions
3 Position
Power Dissipation
625 mW
Breakdown Voltage (Collector to Emitter)
50 V
hFE Min
200 @100µA, 5V
Input Power (Max)
625 mW
DC Current Gain (hFE)
200
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 mW

2N5210BU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bag
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N5210BU Documents

ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
9 Pages / 0.2 MByte
ON Semiconductor
2 Pages / 0.04 MByte
ON Semiconductor
13 Pages / 0.34 MByte
ON Semiconductor
1 Pages / 0.15 MByte

2N5210 Documents

ON Semiconductor
Trans GP BJT NPN 50V 0.05A 3Pin TO-92
Central Semiconductor
Trans Npn 50V 0.05A To-92
Fairchild
Trans GP BJT NPN 50V 0.1A 3Pin TO-92
Motorola
MOT# 2N5210 Bipolar Small Signal NPN Gen Pur SS
NTE Electronics
NTE ELECTRONICS 2N5210 Bipolar (BJT) Single Transistor, NPN, 50V, 30MHz, 625mW, 100mA, 250 hFE
Samsung
NPN EPITAXIAL SILICON TRANSISTOR
HGF
TRANS NPN 50V 0.05A TO-92
Micro Electronics
NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS
TI
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
ROHM Semiconductor
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
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