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2N5457G
$ 0.825
2N5457G Datasheet PDF (5 Pages)
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2N5457G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
25.0 V
Current Rating
10.0 mA
Case/Package
TO-226-3
Drain to Source Resistance (on) (Rds)
2.00 mΩ
Polarity
N-Channel
Power Dissipation
310 mW
Drain to Source Voltage (Vds)
25 V
Breakdown Voltage (Gate to Source)
25.0 V
Reverse Breakdown Voltage
25 V
Input Capacitance (Ciss)
7pF @15V(Vds)
Input Power (Max)
310 mW
Operating Temperature (Max)
135 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
310 mW

2N5457G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Size-Height
5.33 mm
Operating Temperature
135℃ (TJ)

2N5457G Documents

ON Semiconductor
5 Pages / 0.13 MByte
ON Semiconductor
134 Pages / 0.15 MByte

2N5457 Documents

Central Semiconductor
Jfet n-Ch 25V 0.31W To-92
Fairchild
JFET N-CH 25V 625mW TO92
ON Semiconductor
JFET N-CH 25V 625mW TO92
Motorola
Transistor Jfet To92
Calogic
Trans JFET N-CH 25V 3Pin TO-92
Intersil
N-CHANNEL JFET
Solitron Devices
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92,
InterFET
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN
Freescale
JFET N-CH 25V 625mW TO92
Allegro MicroSystems
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
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