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FDC658AP Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

MOSFETs

Case Package:

TSOT-23-6

Description:

FAIRCHILD SEMICONDUCTOR FDC658AP MOSFET Transistor, P Channel, 4mA, -30V, 0.044Ω, 10V, 1.8V

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Documentation:

FDC658AP Datasheet (5 Pages)

Part Numbering System on1 Page

FDC658AP Datasheet PDF (5 Pages)

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FDC658AP Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

6 Pin

Case/Package

TSOT-23-6

Power Rating

1.6 W

Number of Positions

6 Position

Drain to Source Resistance (on) (Rds)

0.044 Ω

Polarity

P-Channel

Power Dissipation

1.6 W

Threshold Voltage

1.8 V

Drain to Source Voltage (Vds)

30 V

Breakdown Voltage (Gate to Source)

±25.0 V

Continuous Drain Current (Ids)

4.00 mA

Rise Time

12 ns

Input Capacitance (Ciss)

470pF @15V(Vds)

Input Power (Max)

800 mW

Fall Time

6 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1.6 W

View Datasheet >

FDC658AP Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

3 mm

Size-Width

1.7 mm

Size-Height

1 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

FDC658AP Environmental

FDC658AP Export Classifications

FDC658AP Function Overview

FDC658AP Documents

FDC658AP Datasheet

Fairchild

5 Pages / 0.21 MByte

FDC658AP Other Datasheet PDF

Fairchild

8 Pages / 0.09 MByte

FDC658AP Notice File

Fairchild

1 Pages / 0.44 MByte

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FAIRCHILD SEMICONDUCTOR FDC658P MOSFET Transistor, P Channel, -4A, -30V, 0.041Ω, -10V, -1.7V

FDC658AP Datasheet PDF

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FAIRCHILD SEMICONDUCTOR FDC658AP MOSFET Transistor, P Channel, 4mA, -30V, 0.044Ω, 10V, 1.8V

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