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2N5551RL1G
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2N5551RL1G Datasheet PDF (6 Pages)
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2N5551RL1G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
300 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
160 V
Current Rating
600 mA
Case/Package
TO-92-3
Polarity
NPN
Power Dissipation
625 mW
Gain Bandwidth Product
300 MHz
Breakdown Voltage (Collector to Emitter)
160 V
Continuous Collector Current
0.6A
hFE Min
80 @10mA, 5V
Input Power (Max)
625 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 mW

2N5551RL1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

2N5551RL1G Documents

ON Semiconductor
6 Pages / 0.08 MByte
ON Semiconductor
11 Pages / 0.39 MByte
ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
13 Pages / 0.34 MByte

2N5551RL1 Documents

ON Semiconductor
TO-92 NPN 160V 0.6A
Motorola
600mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
DAYA
Amplifier Transistors
ON Semiconductor
TO-92 NPN 160V 0.6A
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