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Part Datasheet Search > MOSFETs > Infineon > IRF3710ZLPBF Datasheet PDF
IRF3710ZLPBF
$ 0.206
IRF3710ZLPBF Datasheet PDF (12 Pages)
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IRF3710ZLPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-262-3
Power Rating
160 W
Number of Channels
1 Channel
Polarity
N-Channel
Power Dissipation
160 W
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
59A
Rise Time
77 ns
Input Capacitance (Ciss)
2900pF @25V(Vds)
Fall Time
56 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
160W (Tc)

IRF3710ZLPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Width
4.5 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF3710ZLPBF Documents

Infineon
12 Pages / 0.37 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.12 MByte

IRF3710 Documents

International Rectifier
Trans MOSFET N-CH 100V 57A 3Pin (3+Tab) TO-220AB
Infineon
TO-220AB N-CH 100V 57A
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 18Milliohms; ID 7.3A; TO-220AB; PD 2.5W
Infineon
D2PAK N-CH 100V 57A
Infineon
TO-220AB N-CH 100V 59A
Infineon
D2PAK N-CH 100V 59A
International Rectifier
Trans MOSFET N-CH 100V 57A 3Pin(2+Tab) D2PAK T/R
Infineon
D2PAK N-CH 100V 57A
Infineon
D2PAK N-CH 100V 57A
Infineon
TO-262 N-CH 100V 57A
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