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2N6111 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

BJTs

Case Package:

TO-220-3

Description:

Trans GP BJT PNP 30V 7A 3Pin(3+Tab) TO-220 Tube

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

2N6111 Datasheet (4 Pages)2N6111 Application Note (5 Pages)

2N6111 Datasheet PDF (4 Pages)

View Datasheet

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2N6111 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

4 MHz

Number of Pins

3 Pin

Voltage Rating (DC)

-40.0 V

Current Rating

-7.00 A

Case/Package

TO-220-3

Number of Positions

3 Position

Polarity

PNP, P-Channel

Power Dissipation

40 W

Breakdown Voltage (Collector to Emitter)

30 V

hFE Min

30 @3A, 4V

hFE Max

150

Input Power (Max)

40 W

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

40000 mW

View Datasheet >

2N6111 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended for New Designs

Packaging

Tube

Material

Silicon

Operating Temperature

150℃ (TJ)

View Datasheet >

2N6111 Environmental

2N6111 Function Overview

2N6111 Documents

2N6111 Datasheet

ST Microelectronics

4 Pages / 0.05 MByte

2N6111 Other Datasheet PDF

ST Microelectronics

20 Pages / 2.6 MByte

2N6111 Application Note

ST Microelectronics

5 Pages / 0.1 MByte

2N6111 Other References

ST Microelectronics

1 Pages / 0.13 MByte

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