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Part Datasheet Search > MOSFETs > IXYS Semiconductor > IXTN36N50 Datasheet PDF
IXTN36N50
$ 18.565
IXTN36N50 Datasheet PDF (4 Pages)
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IXTN36N50 Specifications

TYPE
DESCRIPTION
Mounting Style
Chassis
Number of Pins
3 Pin
Case/Package
SOT-227-4
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.12 Ω
Polarity
N-Channel
Power Dissipation
400 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
500 V
Continuous Drain Current (Ids)
36.0 A
Input Capacitance (Ciss)
8500pF @25V(Vds)
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
400000 mW

IXTN36N50 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active

IXTN36N50 Documents

IXYS Semiconductor
4 Pages / 0.36 MByte
IXYS Semiconductor
6 Pages / 0.12 MByte

IXTN36 Documents

IXYS Semiconductor
SOT-227B N-CH 500V 36A
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