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Part Datasheet Search > BJTs > ON Semiconductor > 2SA1507S Datasheet PDF
2SA1507S
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2SA1507S Datasheet PDF (7 Pages)
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2SA1507S Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
120 MHz
Number of Pins
3 Pin
Case/Package
TO-126-3
Polarity
PNP
Power Dissipation
10 W
Gain Bandwidth Product
120 MHz
Breakdown Voltage (Collector to Emitter)
160 V
hFE Min
100 @100mA, 5V
Input Power (Max)
1.5 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
1500 mW

2SA1507S Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Material
Silicon
Operating Temperature
150℃ (TJ)

2SA1507S Documents

ON Semiconductor
7 Pages / 0.34 MByte
ON Semiconductor
11 Pages / 0.24 MByte

2SA1507 Documents

Sanyo Semiconductor
PNP Epitaxial Planar Silicon Transistors 160V/1.5A Switching Applications
UTC
TO-126 PNP 160V 1.5A
ON Semiconductor
TO-126ML PNP 160V 1.5A
New Jersey Semiconductor
Power Bipolar Transistor
ON Semiconductor
Trans GP BJT PNP 160V 1.5A 3Pin TO-126ML
ON Semiconductor
Trans GP BJT PNP 160V 1.5A 3Pin TO-126ML
Sanyo Semiconductor
TRANS PNP 160V 1.5A TO-126
UTC
Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
New Jersey Semiconductor
Power Bipolar Transistor
Sanyo Semiconductor
Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126ML, 3 PIN
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