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Part Datasheet Search > BJTs > ROHM Semiconductor > 2SB1132T100P Datasheet PDF
2SB1132T100P
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2SB1132T100P Datasheet PDF (5 Pages)
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2SB1132T100P Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Voltage Rating (DC)
-32.0 V
Current Rating
-1.00 A
Case/Package
MPT-3
Polarity
PNP
Power Dissipation
2000 mW
Breakdown Voltage (Collector to Emitter)
32 V
Continuous Collector Current
1A
hFE Min
82 @100mA, 3V
hFE Max
390
Input Power (Max)
2 W
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
2000 mW

2SB1132T100P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
150℃ (TJ)

2SB1132T100P Documents

ROHM Semiconductor
5 Pages / 0.16 MByte
ROHM Semiconductor
5 Pages / 0.07 MByte

2SB1132T100 Documents

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