ADG636YRUZ Datasheet PDF - ADI

●The ADG636YRUZ is a CMOS Dual SPDT Switch that conducts equally well in both directions when the device is on. It operates from a dual ±2.7 to ±5.5V supply or from a single supply of +2.7 to +5.5V. This switch offers ultralow charge injection of ±1.5pC over the entire signal range and leakage current of 10pA typical at 25°C. In addition, it offers on resistance of 85R typical, which is matched to within 2R between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds. It is ideal to use in applications such as automatic test equipment, power routing and sample-and-hold systems as well as data acquisition systems.

● 1pC Charge injection

● Single/dual-supply operation

● 100pA Leakage current (maximum at 25°C)

● 85R Typical on-resistance

● Rail-to-rail operation

● Fast switching times

● <0.1µW Typical power consumption

● TTL-/CMOS-compatible inputs

●ESD sensitive device, take proper precaution while handling the device.